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研究了源漏整体刻蚀欧姆接触结构对AlGaN/G N高电子迁移率晶体管(HEMT)的欧姆接触电阻和金属电极表面形貌的影响。利用传输线模型(TLM)对样品的电学性能进行测试,使用原子力显微镜(AFM)对样品的表面形貌进行表征,通过透射电子显微镜(TEM)和X射线能谱仪(EDS)对样品的剖面微结构和界面反应进行表征与分析。实验结果显示,采用Ti/Al/Ni/Au(20 nm/120 nm/45 nm/55 nm)金属和源漏整体刻蚀欧姆接触结构,在合金温度870℃,升温20 s,退火50 s条件下,欧姆接触电阻最低为0.13Ω·mm,方块电阻为363.14Ω/,比接触电阻率为4.54×10~(-7)Ω·cm~2,形成了良好的欧姆接触,降低了器件的导通电阻。
The effects of the ohmic contact structure with the source and drain etched on the ohmic contact resistance and the surface morphology of the AlGaN / GN high electron mobility transistor (HEMT) were investigated. The transmission line model (TLM) was used to test the electrical properties of the samples. The surface morphology of the samples was characterized by atomic force microscopy (AFM). The transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) Structure and interface reactions were characterized and analyzed. The experimental results show that the ohmic contact structure is entirely etched by Ti / Al / Ni / Au (20 nm / 120 nm / 45 nm / 55 nm) metal and the source and drain are annealed at an alloy temperature of 870 ° C. for 20 s and annealed for 50 s , The lowest ohmic contact resistance is 0.13Ω · mm, the square resistance is 363.14Ω /, and the contact resistivity is 4.54 × 10 ~ (-7) Ω · cm ~ 2, forming a good ohmic contact, reducing the lead Through resistance.