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加州大学贝克利分校,洛克希德及TRW公司联合研制了一种新型的而发射激光器。由于不同解理及衬底的蚀刻工艺,垂直结构的DFB面发射激光器(DFB——SELD)在光电集成有广泛的应用前景。要实现激光器的低阀值和高效率,要求器件有高的腔反射率及好的载流子限制作用。利用1/4波长的GaAs/AlGaAs多层结构可以得到高的反射率,利用侧向掩埋异质结可以实现载流子限制。本文报导的是利用MOCVD法生长1/4波长多层薄层,用选择二次LPE及选择Zn扩散实现载流子限制,研制了室温连续工作,
UC Berkley, Lockheed and TRW have jointly developed a new type of lasing lasers. Due to different cleavage and substrate etching processes, DFB - SELD with vertical structure has a wide range of applications in optoelectronic integration. To achieve the low threshold and high efficiency of the laser, the device is required to have high cavity reflectivity and good carrier limiting. The high reflectivity can be obtained by using a 1/4 wavelength GaAs / AlGaAs multilayer structure, and the carrier confinement can be realized by using the lateral buried heterojunction. This paper reports the growth of a quarter-wave multi-layer thin film by MOCVD, carrier selection with selective secondary LPE and selective Zn diffusion, and the continuous working at room temperature was developed.