An analytical model of the electric field distributions of buried superjunction devices

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:liongliong592
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An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green’s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations. An analytical model of the electric field distributions of buried superjunction structures, based on the charge superposition method and Green’s function approach, is derived. Ann accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation. influence of the dimension and doping concentration of each layer on the electric field is discussed in detail, and the breakdown voltage is demonstrated by simulations.
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