本文论述了低波段集成宽带低噪声晶体管放大器的设计与制作。利用薄膜微带工艺在三氧化二铝陶瓷基片上制作了微带传输线路、镍铬电阻,外焊四只CG39盘型晶体管以及低损耗小型陶瓷电容,组成了混合集成直接耦合式晶体管放大器。放大器在0.5～1.0千兆赫频带内增益大于25分贝;带内增益平坦度小于±1分贝;带内噪声系数(R_g=50欧姆)典型值为2.7分贝;1分贝压缩点的动态输出功率为—2分贝毫瓦;输入、输出驻波比小于2:1。整个放大器密封在长53毫米、宽37毫米、厚20毫米铍金铝盒中,总重量小于100克。输入输出为50欧姆L_g密封阳座。放大器在—60～+85℃温度范围内能正常工作。 This article discusses the design and fabrication of low band integrated broadband low noise transistor amplifiers. A thin film microstrip process was used to fabricate a hybrid integrated direct coupled transistor amplifier with a microstrip transmission line, a nickel-chromium resistor, four CG39 external transistors and a low-loss miniature ceramic capacitor on an alumina ceramic substrate. The amplifier has a gain greater than 25 dB in the 0.5-1.0 GHz band; in-band gain flatness of less than ± 1 dB; in-band noise figure (R_g = 50 ohms) typically 2.7 dB; dynamic output power at 1 dB compression point is - 2 dB milliwatts; input, output VSWR less than 2: 1. The entire amplifier is sealed in a beryllium aluminum box measuring 53 mm long, 37 mm wide and 20 mm thick for a total weight of less than 100 grams. Input and output of 50 ohm L_g sealed Yang seat. Amplifier in -60 ~ +85 ℃ temperature range to work properly.