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以气体放电活化反应蒸发(GDARE)沉积法通过多次沉积制备不同厚度ZnO薄膜。原子力显微镜和X射线衍射测试分析表明,所得ZnO薄膜具有纳米颗粒多晶结构,粒径在30~70 nm,晶粒尺寸随薄膜厚度增加而增大,不同厚度的薄膜均具有高度的c轴取向性。由GDARE法沉积的ZnO薄膜具有较高的温差电动势率S(Seebeck系数),厚度200 nm的薄膜在440K附近S可达600μV/K。相同温度下,薄膜的温差电动势率S与电阻率ρ均随着膜厚的增加而减小。在考察了薄膜电阻率与温差电动势率的综合影响后,得到在440 K附近,厚度为600 nm的ZnO薄膜具有相对最优秀的热电性能。讨论了ZnO薄膜的表面电传导过程及温差电动势产生机制。
Different thicknesses of ZnO films were prepared by multiple depositions using GDARE deposition. Atomic force microscopy and X-ray diffraction analysis show that the obtained ZnO thin films have the polycrystalline structure of nano-particles with particle size of 30-70 nm. The grain size increases with the increase of the film thickness. The films with different thicknesses have high c-axis orientation Sex. The ZnO thin films deposited by GDARE method have a higher temperature difference emf S (Seebeck coefficient), and the film thickness of 200 nm can reach 600 μV / K near 440K. At the same temperature, the film temperature difference between the emf S and resistivity ρ decreases with the increase of film thickness. After investigating the combined effect of the film resistivity and the temperature difference electromotive force, a ZnO thin film with a thickness of 600 nm near 440 K has the relatively best thermoelectric properties. The surface electrical conduction of ZnO thin films and the mechanism of temperature difference electromotive force are discussed.