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利用Kr F准分子激光器晶化非晶硅薄膜,研究了不同的激光能量密度和脉冲次数对非晶硅薄膜晶化效果的影响。利用X射线衍射(XRD)和扫描电子显微镜(SEM)对晶化前后的样品的物相结构和表面形貌进行了表征和分析。实验结果表明,在激光频率为1 Hz的条件下,能量密度约为180 m J/cm2时,准分子激光退火处理实现了薄膜由非晶结构向多晶结构的转变;当大于晶化阈值180 m J/cm2小于能量密度230 m J/cm2时,随着激光能量密度增大,薄膜晶化效果越来越好;激光能量密度为230 m J/cm2时,晶化效果最好、晶粒尺寸最大,约60 nm,并且此时薄膜沿Si(111)面择优生长;脉冲次数50次以后对晶化的影响不大。
The influence of different laser fluence and pulse number on the crystallization of amorphous silicon thin films was studied by Kr F excimer laser crystallization of amorphous silicon thin films. The phase structure and surface morphology of the samples before and after crystallization were characterized and analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experimental results show that when the energy density is about 180 mJ / cm2 at a laser frequency of 1 Hz, the transition from amorphous structure to polycrystalline structure is achieved by the excimer laser annealing process. When the energy density is larger than the crystallization threshold 180 When mJ / cm2 is less than 230 mJ / cm2, the crystallization efficiency of the film is getting better with the increase of laser energy density. When the laser energy density is 230 mJ / cm2, the crystallization is the best, The size is the largest, about 60 nm, and the film preferentially grows along the Si (111) surface at this time; the influence of the pulse after 50 times on the crystallization is insignificant.