论文部分内容阅读
利用稀土元素独特的光、电特性,成功地制备出稀土掺杂的CuIn1-xRxTe2(R=稀土)(CIRT)新型光伏半导体材料。应用X射线衍射、扫描电镜、拉曼散射等进行了相关的晶体结构、显微组织、光性能研究。研究表明:稀土元素的掺杂能够稳定黄铜矿型的晶体结构,点阵常数随稀土元素的掺杂呈现出涨落性。应用Rietveld方法测定原子占位,稀土元素部分替代In占据4b晶位。稀土元素的掺杂导致晶粒团聚现象,并形成柱状或层状单晶颗粒,具有透光性。CuInTe2和CuIn0.9Sm0.1Te2的Eg值分别为1.25和1.32 eV,这表明:CuIn0.9Sm0.1Te2与CuIn1-xGaxTe2具有接近的禁带宽度,适宜做光伏材料。拉曼散射实验证实:稀土元素的添加对于光散射诱发的原子振动频率有较大的影响,使得一些原有频率消失,有助于光谱频段的选择性吸收。
The rare earth doped CuIn1-xRxTe2 (R = rare earth) (CIRT) novel photovoltaic semiconductor material has been successfully prepared using the unique optical and electrical properties of rare earth elements. The related crystal structure, microstructure and optical properties were studied by X-ray diffraction, scanning electron microscopy and Raman scattering. The results show that the doping of rare earth elements can stabilize the chalcopyrite crystal structure. The lattice constant shows the fluctuation with the doping of rare earth elements. The Rietveld method was used to determine the atomic occupancy, while the rare earth elements partially replaced In to occupy the 4b site. The doping of rare earth elements leads to the phenomenon of crystal grains agglomeration, and the formation of columnar or layered single crystal particles with translucency. The Eg values of CuInTe2 and CuIn0.9Sm0.1Te2 are 1.25 and 1.32 eV, respectively, indicating that CuIn0.9Sm0.1Te2 and CuIn1-xGaxTe2 have close bandgap widths and are suitable for photovoltaic materials. Raman scattering experiments confirmed that the addition of rare earth elements has a great influence on the frequency of atomic vibration induced by light scattering, which makes some original frequencies disappear and contributes to the selective absorption in the spectral band.