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在室温下将C+注入硅衬底，注入能量和剂量分别为50keV，2×1016cm－2．经高温退火形成，β-SiC颗粒沉淀．用傅里叶变换红外吸收谱，光电子能谱以及高分辨率透射电镜对注入样品中的纳米β-SiC及其微结构作了分析．
C + was implanted into the silicon substrate at room temperature with an implantation energy of 50 keV and a dose of 2 × 10 16 cm -2. After annealing at high temperature, β-SiC particles precipitate. The Fourier transform infrared absorption spectroscopy, photoelectron spectroscopy and high resolution transmission electron microscopy were used to analyze the nano-β-SiC and its microstructures.