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二维材料异质结是由石墨烯、六方氮化硼、过渡金属二硫族化合物、黑磷等二维材料通过面内拼接或层间堆叠形成的,并由此可分为二维材料面内异质结和垂直异质结.二维材料面内异质结可以实现区域内载流子的特殊传输行为;而垂直异质结中的层间量子耦合效应能够导致新颖的物理特性,通过调节异质结构界面可调制器件的电学及光学性能.目前,随着电子器件、光电器件等对集成性、功能性的要求不断提高,二维材料异质结越来越多地受到研究者的关注,实现二维材料异质结结构(包括界面)的有效调控是构筑高性能、高集成器件的前提.本文主要对比各类二维材料异质结的制备方法,介绍主流的几类二维材料异质结基电子器件和光电器件的结构、工作原理和性能,展望有前景的新型制备方法,并指出二维材料异质结在实际应用中面临的挑战.
The two-dimensional material heterojunction is formed by in-plane splicing or interlayer stacking of two-dimensional materials such as graphene, hexagonal boron nitride, transition metal disulfide compounds and black phosphorus, and can be divided into two-dimensional material surfaces Internal heterojunction and vertical heterojunction. Two-dimensional material in-plane heterojunction can achieve the special transport of carriers within the region; and the effect of interlayer quantum coupling in the vertical heterojunction can lead to novel physical properties, through Adjust the electrical and optical properties of tunable devices with heterogeneous interfaces.At present, as the requirements for integration and functionality of electronic devices and optoelectronic devices continue to increase, two-dimensional material heterojunctions are increasingly accepted by researchers It is the prerequisite to construct high performance and highly integrated devices that focus on and realize the effective control of heterojunction structure (including interface) of two-dimensional materials.This paper mainly compares the preparation methods of all kinds of two- The structure, working principle and performance of materials heterojunction-based electronic devices and optoelectronic devices are prospected, and new promising methods are presented. The challenges of practical application of 2D heterojunction are pointed out.