论文部分内容阅读
,Influence of A1N buffer layer thickness on structural properties of GaN epilayer grown on Si (111)
【作 者】
：
【机 构】
：
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年3期
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