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分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长法生长出 Ga Al As/Ga As梯度折射率分别限制单量子阱材料 ( GRIN- SCH- SQW)。利用该材料制作出的列阵半导体激光器输出功率达到 10 W(室温 ,连续 ) ,峰值波长为 80 6～ 80 9nm
The factors which influence the output power of the array semiconductor laser are analyzed. The GaAlAs / GaAs gradient refractive index constrained single quantum well material (GRIN-SCH- SQW) was grown by molecular beam epitaxy. The output power of an array semiconductor laser fabricated using this material has reached 10 W (room temperature, continuous) with a peak wavelength of 80 6 to 80 9 nm