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提出采用硅基F-离子处理技术研制硅基GaN超级结高压器件,并建立了三维电荷器件模型。实验结果表明,当栅极电压偏置于-1.25~-0.25 V时,漂移区长度为10μm的新器件其峰值跨导g m(max)出现最大值约为390 mS/mm,且较为平缓。该器件导通电阻较低,比导通电阻为0.562 5 mΩ·cm2,仅为相同漂移区长度的常规增强型GaN高压器件比导通电阻率2.25 mΩ·cm2的25%。该器件击穿特性与漂移区长度呈较好的线性关系,并在漂移区长度为15μm时,击穿电压接近硅基GaN高压器件的理想击穿电压,约为657 V,比前者器件结构的击穿电压提高了约182 V。
The silicon-based F-ion processing technology is proposed to develop silicon-based GaN super-junction high voltage devices, and a three-dimensional charge device model is established. The experimental results show that the peak transconductance g m (max) appears to be about 390 mS / mm in the new device with a drift length of 10 μm when the gate voltage is biased at -1.25 ~ -0.25 V, and the average value is relatively flat. The device has lower on-resistance, 0.562 5 mΩ · cm 2 on-resistance and 25% higher on-resistance 2.25 mΩ · cm 2 for conventional reinforced GaN high voltage devices with the same drift region length. The breakdown characteristic of the device shows a good linear relationship with the drift region length. When the drift region length is 15μm, the breakdown voltage is close to the ideal breakdown voltage of the GaN high-voltage GaN device, which is about 657 V, Breakdown voltage increased by about 182V.