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利用强流脉冲离子束技术在Si基体上快速大面积沉积类金刚石 (DLC)薄膜 .电压为 2 5 0kV ,束流密度为2 5 0A·cm- 2 ,脉宽为 80— 10 0ns,能流密度为 5J·cm- 2 的离子束 (主要由碳离子和氢离子组成 )聚焦到石墨靶材上 ,使石墨靶材充分蒸发和电离 ,在石墨靶的法线方向的Si基体上沉积非晶的碳薄膜 .Raman谱分析显示 ,所沉积薄膜为类金刚石薄膜 .随着靶材与基体之间距离的减小 ,薄膜中sp3碳成分含量增加 ,同时硬度值也有所增大 ,并且薄膜的摩擦系数和表面粗糙度增加 .x射线光电子能谱 (XPS)分析显示薄膜中的sp3碳含量为 4 0 %左右 .由扫描电子显微镜和原子力显微镜观察得知 ,薄膜表面比较光滑 ,表面的粗糙度不大 .薄膜显微硬度在 2 0— 30GPa之间 ,薄膜的摩擦系数为 0 16— 0 38之间
DLC thin films deposited on Si substrates by high-current pulsed ion beam technique at a voltage of 250 kV, a beam current density of 250 A · cm-2 and a pulse width of 80-10 000 ns, An ion beam (composed mainly of carbon ions and hydrogen ions) having a density of 5 J · cm -2 is focused on a graphite target to sufficiently evaporate and ionize the graphite target, thereby depositing amorphous material on the Si substrate in the normal direction to the graphite target Raman spectrum analysis shows that the deposited film is a diamond-like carbon film.With the decrease of the distance between the target and the substrate, the content of sp3 carbon in the film increases and the hardness value also increases, and the friction of the film Coefficient and surface roughness increased.X-ray photoelectron spectroscopy (XPS) analysis showed that the sp3 carbon content in the film was about 40% .The scanning electron microscope and atomic force microscope showed that the film surface is relatively smooth, the surface roughness is not Large. Film microhardness between 20-30GPa, the friction coefficient of the film is between 0 16- 0 38