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用分子束外延系统 (MBE)生长了GaAs/AlGaAs不对称耦合双量子阱 (ACDQW ) ,采用组合注入质子的方法 ,在同一块衬底上获得了不同注入剂量的GaAs/AlGaAs不对称耦合双量子阱单元 ,没有经过快速热退火的过程 ,在常温下测量了不同注入剂量量子阱单元的显微光荧光谱和光调制反射光谱 ,发现了各区域子带间跃迁能量最大变化范围达到 81meV .由于样品未作高温热退火处理 ,为此由Al组分误差函数模型推导的扩散长度要大大高于扩散系数公式 .耦合量子阱的界面混合效应对于质子注入非常敏感 .
GaAs / AlGaAs asymmetric coupling double quantum wells (ACDQW) were grown by molecular beam epitaxy (MBE). The GaAs / AlGaAs asymmetric coupling double quantum wells Well unit without rapid thermal annealing process, the fluorescence spectra and the light modulation reflectance spectra of quantum wells with different injection dosages were measured at room temperature, and the maximum range of transition energies between the subbands in each region was found to be 81 meV. Since the sample For the reason, the diffusion length deduced from the error function model of Al composition is much higher than the diffusion coefficient formula, and the interface mixing effect of the coupling quantum well is very sensitive to proton injection.