日立制作所和日本东北大学共同开发出了在蓝宝石底板上制备石墨烯的技术。可利用气相生长法,以600~700℃的较低温度,通过控制层数来制备一层到数层的石墨烯。目前已成功制备出连续膜尺寸(晶畴尺寸)为10nm左右的石墨烯。制备所需时间短,适于大量生产。同时,还开发了通过测定光透 Hitachi and Japan’s Tohoku University jointly developed a sapphire substrate on the preparation of graphene technology. By means of vapor phase growth, one to several layers of graphene can be prepared by controlling the number of layers at a relatively low temperature of 600 to 700 ° C. At present, graphene having a continuous film size (crystal domain size) of about 10 nm has been successfully prepared. The preparation time is short, suitable for mass production. At the same time, also developed through the determination of light through