基于排列熵(PE)分析,提出了一种基于半导体激光器(SL)在双光反馈作用下获取高复杂度混沌激光的方案。仿真结果表明,当两个光反馈的延迟时间近似相同、而差值约为激光器弛豫振荡周期一半时,混沌光的PE特征值达到最大,具有最高的复杂度。调节双光反馈的强度值,混沌光的PE特征值将随反馈强度的增加而首先快速增大,然后再缓慢降低。在一定优化双光反馈强度值范围内,PE特征值可取得最大值,从而得到高复杂度的混沌光输出。与单光反馈SL系统相比较,在不同反馈强度下,双光反馈系统所获得的混沌光的PE特征值也总是大于单光反馈系统的结果。 Based on Permutation Entropy (PE) analysis, a scheme based on semiconductor laser (SL) to obtain high complexity chaotic laser under the dual optical feedback is proposed. The simulation results show that when the delay time of two optical feedbacks is approximately the same and the difference is about half of the relaxation oscillation period of the laser, the PE eigenvalue of the chaotic light reaches the maximum with the highest complexity. Adjusting the intensity value of the double light feedback, the PE eigenvalue of the chaotic light will first rapidly increase with the increase of the feedback intensity, and then slowly decrease. Within a certain optimized double light feedback intensity value, the maximum value of the PE eigenvalue can be obtained, so as to obtain a high complexity chaotic light output. Compared with the single-light feedback SL system, the PE eigenvalues ​​of the chaotic light obtained by the dual-light feedback system are always greater than that of the single-light feedback system under different feedback intensities.