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碲镉汞对于红外工业的热成象来说是最重要的探测器材料。事实说明,这种材料极适于制作2～14微米的探测器,现已有光导阵列器件、光电二极管阵列器件,还有焦平面信息处理等更先进的器件。光导器件用的是一种“n”型材料,是用布里奇曼法在本公司生长的。由于有了这种技术,再加以对工艺作了深入的研究,从而使材料达到了很高的质量。近几年来,器件的性能和设计的选择性都有了很大的提高。8～14微米和3～5微米光导探测器的典型性能数据见表1。尤其要指出的是这些阵列器件的响应率和D~*的均匀性都很好,1/f拐点频率很低。
HgCdTe is the most important detector material for thermal imaging in the infrared industry. Facts have proved that this material is very suitable for the production of 2 ~ 14 micron detectors, now has a light guide array devices, photodiode array devices, as well as focal plane information processing and other more advanced devices. The light guide device uses an “n” type material, which is grown in our company using the Bridgman method. Thanks to this technology, further research into the process has been carried out so that the material achieves a high level of quality. In recent years, device performance and design selectivity have been greatly improved. Typical performance data for 8 to 14 micron and 3 to 5 micron lightguide detectors are shown in Table 1. In particular, it is noted that the responsivity and D ~ * uniformity of these arrayed devices are good, and the frequency of the 1 / f inflection point is very low.