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为研究量子点发光器件结构与性能的关系,制备了以CdSe/ZnS量子点作为发光层、poly-TPD作为空穴传输层,Alq_3作为电子传输层的量子点发光二极管,对器件结构及性能参数进行了表征,结果显示器件具有开启电压低、色纯度高等特点。结合测试数据,对量子点发光二极管进行了器件结构建模,利用隧穿模型及空间电荷限制电流模型对实验结果进行了分析,研究了器件中载流子的注入与传输机理。器件测试与仿真结果表明:各功能层厚度会影响载流子在量子点层的注入平衡,同时器件中载流子的注入与传输存在一转变电压,当外加电压低于转变电压时,器件中载流子的注入主要符合隧穿模型;当外加电压高于转变电压时,器件中载流子的注入主要符合空间电荷限制电流模型。研究结果验证了器件结构建模的合理性,可以利用仿真的方法进行器件结构优化并确定相关参数,这对器件性能的提高具有指导意义。
In order to study the relationship between structure and performance of quantum dot light-emitting devices, quantum dot light-emitting diodes with CdSe / ZnS QDs as light-emitting layers, poly-TPD as hole-transport layers and Alq_3 as electron-transport layers were prepared. The structure and performance parameters The results show that the device has the characteristics of low turn-on voltage and high color purity. Combined with the test data, the quantum dot light-emitting diode was modeled as a device structure. The tunneling model and the space-charge-limited current model were used to analyze the experimental results. The mechanism of charge injection and transport was studied. Device test and simulation results show that the thickness of each functional layer will affect the carrier injection quantum dot layer balance, while the carrier injection and transmission of the device there is a transition voltage, when the applied voltage is lower than the transition voltage, the device The carrier injection mainly conforms to the tunneling model. When the applied voltage is higher than the transition voltage, the carrier injection in the device mainly conforms to the space charge limited current model. The research results verify the rationality of the device structure modeling, and can optimize the device structure and determine the relevant parameters by using the simulation method, which is instructive for improving the device performance.