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随着光网络通信容量的高速增长,将分立的光学器件集成化以减小器件尺寸、降低成本成为光电子器件发展的必然趋势。光子集成回路具有尺寸小、功耗低、质量轻等优点,是解决未来宽带光网络能耗大、体积大、容量小等问题的关键技术。综述了基于多项目晶圆流片的规模化光子集成技术,主要包括硅基光子集成技术、Ⅲ-Ⅴ族磷化铟集成技术,以及以氮化硅和二氧化硅多层波导结构为基础的TriPleX集成技术;介绍了目前可以提供这3种多项目晶圆流片光子集成技术的代工平台以及利用这些代工平台实现的一些光子集成芯片,并对这些平台的工艺参数进行了比较。
With the rapid growth of optical network communication capacity, integrating discrete optical components to reduce device size and cost has become an inevitable trend for the development of optoelectronic devices. The photonic integrated circuit has the advantages of small size, low power consumption and light weight, and is a key technology for solving the problems of large energy consumption, large volume and small capacity of a broadband optical network in the future. The large-scale photon integration technology based on multi-project wafer slice is reviewed, including silicon-based photon integration, group III-V indium phosphide integration technology, and silicon nitride and silicon dioxide multilayer waveguide structures TriPleX integration technology is introduced. At present, the foundry platforms that can provide these three kinds of multi-project wafer lithography photonic integrated technologies are introduced, and some photonic integrated chips are realized by using these foundry platforms. The process parameters of these platforms are compared.