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引言InSb红外光电探测器的性能尤其阻抗除与P-N特性有关外,与表面状态直接有关。近几年国外一些研究人员采用ESCA和AES并结合离子溅射技术研究了InSb扩散Cd的P-N结,各种抛光腐蚀剂处理后InSb的表面状态;InSb表面氧化机理和电导率的关系;各种腐蚀剂处理后表面沾污及In/Sb比变化等。本工作的目的在于研究阳极氧化InSb表面的化学状态及工艺过程中的表面沾
INTRODUCTION InSb infrared photodetectors, in particular, their impedances are directly related to the surface state in addition to the P-N characteristics. In recent years, some foreign researchers studied the PN junction of InSb-diffused Cd, the surface state of InSb treated with various polishing etchants, the relationship between the surface oxidation mechanism of InSb and the electrical conductivity by ESCA and AES combined with ion sputtering technology, After treatment, surface contamination and In / Sb ratio changes. The purpose of this work is to study the chemical state of the anodized InSb surface and the surface dip in the process