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即使按照保守的说法,半导体工业还是有很强的生命力。芯片记忆容量的提高以及逻辑和处理芯片速度的提高使光刻领域发生巨大变化。一般说,几何尺寸的缩小、分步扫描掩膜、高度复杂性的设计以及集成电路层数的增加使光刻设备得到许多改善。作为特例,掩模修整系统对光刻也起了重要作用。除了上述发展趋势外,ASIC 器件(专用集成电路)需要尽快将新的设计转移到生产型硅器件中,它包括标准池、门列阵、FPLA和 EPLA 技术。ASIC 生产发展中的关键是要在24小时内产生掩模和图带。目前 ASIC 制法占全世界集成电路的9%左右,但有人估计三年后会上升到21%。近年来,掩模制造者在满足掩模规范方面比目前要求有更大的自由度。许多产品最易碰到的问题是缺陷密度。主要缺陷是多余的铬点,它可以用 Nd:YAG 激光系统清除,这种系统通常称为“Zapper”。在些某情况下,某些部份铬比较少而形成缺陷,这时用“Zap-per”系统就不能减少缺陷密度。在这种情况下,将芯片报废,或者芯片制造者试图消耗时间或冒风险在寿命到时替换有缺陷的芯片。
Even according to the conservative theory, the semiconductor industry still has strong vitality. The improvement of the memory capacity of the chip and the increase of the logic and the processing chip speed make great changes in the lithography field. In general, the reduction in geometries, step-and-scan masks, the design of a high degree of complexity, and the increased number of integrated circuit layers have resulted in many improvements in lithographic apparatus. As a special case, the mask trimming system also plays an important role in lithography. In addition to the above trends, ASIC devices (application specific integrated circuits) need to be quickly transferred to production silicon devices, including standard cells, gate arrays, FPLA and EPLA technologies. The key to the development of ASIC production is to create masks and bands within 24 hours. The current ASIC system accounts for about 9% of the world’s integrated circuits, but it is estimated that in three years it will rise to 21%. In recent years, mask makers have greater freedom than currently required to meet mask specifications. The most common problem with many products is defect density. The main drawback is the extra chrome, which can be removed with the Nd: YAG laser system, which is often called “Zapper”. In some cases, some parts of the chromium is less formed defects, then use “Zap-per ” system can not reduce the defect density. In this case, the chip is scrapped or the chip maker tries to spend time or risk replacing the defective chip at the end of its life.