论文部分内容阅读
本文通过引入一个“电场函数”使非晶硅隙态密度的场效应测量的分析大大简化,并确立了从实验测得的电流-电压曲线极小值来确定电子电导与空穴电导的比值的方法,使对场效应测量结果的分析更加方便和可靠.还从Goodman等所采用的四条隙态密度分布曲线出发,计算出各有关参量,证明了不同态密度分布并不能与同一条电流-电压曲线拟合.这说明,如果采用合理的分析方法,是可以根据场效应测量结果来确定隙态密度分布的.
In this paper, the introduction of an “electric field function” greatly simplifies the analysis of the field effect measurements of the amorphous state gap density and establishes the minimum value of the current-voltage curve measured experimentally to determine the ratio of electron conductance to hole conductance Method to make the analysis of the field effect measurement more convenient and reliable.According to the four gap density distribution curves adopted by Goodman et al, the relevant parameters are calculated, and it is proved that the distribution of different state density can not be the same with the same current-voltage Curve fitting This shows that if a reasonable analytical method is used, the density distribution of the gap can be determined based on the field effect measurement.