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提出了一种新的在热平衡状态下实时测量碲镉汞（ＭＣＴ）中特征正电子湮没寿命的方法，用该方法测得ＨｇＣｄＴｅ中基体正电子湮没寿命τｂ为２７７±１Ｐｓ，汞空位缺陷捕获态寿命τｄ为３０６±２ｐｓ，并与用其它方法测量的结果进行了比较与讨论．
A new method of measuring the positron annihilation lifetime in MCT is proposed. By using this method, the positron annihilation lifetime τb of the matrix in HgCdTe is 277 ± 1Ps, and the trapped state of mercury vacancy defect Lifetime τd 306 ± 2ps, and compared with the results measured by other methods were discussed.