论文部分内容阅读
用HgCdTe薄膜制成的光电探测器对10.6微米的辐射敏感,工作时无须低温冷却。这些室温下工作的器件可获得亚毫微秒的响应时间。就响应率和探测度而论,探测器在高频时的性能介于冷却的量子探测器和非冷却的热电探测器之间。
Photodetectors made of HgCdTe film are sensitive to 10.6 micron radiation and do not require subcooling when working. Devices operating at room temperature deliver sub-nanosecond response times. In terms of responsivity and detection, the performance of the detector at high frequencies is between that of a cooled quantum detector and a non-cooled thermoelectric detector.