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Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO_2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.
Nc-Si / SiO 2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapor deposition system using in situ oxidation technology, followed by three-step thermal treatments. Carrier transportation at room temperature is characterized by current voltage measurement, and negative different conductances can be observed both under forward and negative biases, which is explained by resonant tunneling. The resonant tunneling peak voltage is related to the thicknesses of the nc-Si and SiO 2 sublayers. And the resonant tunneling peak voltage under negative bias is more than that under forward bias. An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.