设计了一种张应变与压应变相结合的混合应变量子阱结构超辐射发光二极管,研究了TE模和TM模在器件中的模式增益,分析了影响增益偏振性的因素,在此基础上通过改变有源层量子阱的应变类型、应变量以及层数来达到高增益和偏振不敏感性。最后按设计工艺流程生长了芯片,实验结果表明,所设计的SLD芯片单管输出功率在100mA驱动电流下可达3.5mW,出射光谱FWHM约为40nm,20nm波长范围内偏振度为0.3dB,具有较理想的大功率、宽光谱、低偏振度特性。 A mixed strain quantum well structure superluminescent diode with a combination of tensile strain and compressive strain was designed. The mode gain of the TE mode and the TM mode in the device were studied. The factors affecting the gain polarization were analyzed. On this basis, Altering the strain type, strain, and number of layers in the active quantum well to achieve high gain and polarization insensitivity. Finally, the chip is grown according to the design process. The experimental results show that the output power of single chip of SLD chip can reach 3.5mW at 100mA driving current, the emission spectrum FWHM is about 40nm and the polarization degree is 0.3dB in the wavelength range of 20nm. The ideal high-power, wide-spectrum, low-polarization characteristics.