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由于自加热效应的存在,大功率GaN基发光二极管(LED)的芯片温度有可能高出环境温度很多,实验中,芯片温度超出环境高达147K.从实验测量的大功率LED电流电压特性曲线中,将p-n结和等效串联电阻上的电压降落分离出来,得到了大功率LED等效串联电阻随芯片温度的变化情况.在输入电功率自加热效应的影响下,大功率GaN基LED等效串联电阻呈现出剧烈的变化,其阻值由低输入功率时的1.2Ω降低到0.9Ω,然后再升高到1.9Ω,等效串联电阻的功率耗散在输入功率中所占的比例也随着输入功率的增加迅速增加,最高时接近50%,成为大功率输入时影响LED流明效率的主要因素.
Due to the self-heating effect, the chip temperature of high-power GaN-based light-emitting diode (LED) may be much higher than the ambient temperature, in the experiment, the chip temperature is higher than the environment up to 147K.From the experimental measurement of high-power LED current and voltage characteristics curve, The pn junction and the equivalent series resistance voltage drop isolated, get the high-power LED equivalent series resistance with the chip temperature changes in the input power under the influence of self-heating effect, high-power GaN-based LED equivalent series resistance Showing a drastic change in the resistance from 1.2Ω at low input power to 0.9Ω and then to 1.9Ω, the equivalent series resistance of the power dissipation in the input power as a percentage of the input The increase of power increases rapidly, reaching 50% at the highest, becoming the main factor that affects LED lumen efficiency when high power input.