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介绍了105～108 GHz频段功率放大器模块的设计和制作。模块由波导微带转换、功率芯片及芯片偏置电路组成。讨论了放大模块的设计及加工测试过程,并对模块中的关键技术波导一微带转换进行详细阐述。波导一微带转换采用E面微带探针激励完成。通过理论分析及仿真优化后设计出转换模型并制作出实物进行测试。单个转换在100～110 GHz频段内插入损耗小于0.6 dB,回波小于-10 dB。测试结果表明设计的波导-微带转换具有插入损耗小,工作频段宽的优点。采用此转换制作的功率放大模块在105～108 GHz频段上增益大于13 dB,输出功率大于200 mW,达到预期设计指标。
The design and manufacture of power amplifier module in 105 ~ 108 GHz band are introduced. Module by the waveguide microstrip conversion, power chip and chip bias circuit. The design and processing of amplifier module are discussed, and the microstrip conversion of key technology in the module is described in detail. Waveguide-to-microstrip transition using E-side microstrip probe excitation. Through the theoretical analysis and simulation optimization, the transformation model is designed and produced in-kind test. Single conversion in the 100 ~ 110 GHz band insertion loss of less than 0.6 dB, echo less than -10 dB. The test results show that the designed waveguide - microstrip conversion has the advantages of small insertion loss and wide working band. The power amplification module manufactured by this conversion has a gain of more than 13 dB in the 105-108 GHz band and an output power of more than 200 mW, which meets the expected design specifications.