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本文对在ＩｎＳｂ及ＧａＡｓ衬底上用分子束外延生长的ＩｎＳｂ分别以Ｂｅ和Ｓｉ作ｐ型和ｎ型的掺杂作了研究。当衬底温度超过３４０℃时，利用二次离子质谱技术，在ＩｎＳｂ衬底上生长时，发现Ｂｅ向表面有反常迁移现象。而在ＧａＡｓ衬底上生长的掺Ｂｅ的ＩｎＳｂ薄膜中未发现这种迁移。在掺Ｓｉ的ＩｎＳｂ膜中也未发现掺杂剂的再分布现象。ＩｎＳｂ中Ｂｅ的掺杂效率约是ＧａＡｓ中的一半，若想使Ｓｉ在ＩｎＳｂ中的掺杂效率达到其在ＧａＡｓ中的掺杂效率，在整个生长过程中，需将衬底温度维持在＜３４０℃。利用低温生长技术，可生长出呈现二维电子气体特性的Ｓｉ△－掺杂结构。
In this paper, InSb and GaAs substrate by molecular beam epitaxial growth of InSb Be and Si for p-type and n-type doping were studied. When the substrate temperature exceeds 340 ℃, using the secondary ion mass spectrometry technology, the InSb substrate growth, we found that Be to the surface of anomalous migration phenomenon. No such migration was found in Be-doped InSb thin films grown on GaAs substrates. No redistribution of dopants was observed in Si-doped InSb films. The doping efficiency of Be in InSb is about half that of GaAs. To achieve the doping efficiency of Si in InSb to its doping efficiency in GaAs, the substrate temperature should be maintained at <340 ℃. Using low temperature growth techniques, Si △ - doped structures that exhibit two dimensional electron gas properties can be grown.