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Structures of nanocrystalline-Si (nc-Si) sandwiched between two asymmetric ultrathin SiO2 layers were fabri-cated.
,Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO2 by In-Situ Fabric
【摘 要】
：
Structures of nanocrystalline-Si (nc-Si) sandwiched between two asymmetric ultrathin SiO2 layers were fabri-cated.
【机 构】
：
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Na
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2005年3期
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