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用MEVVA离子源将Nd离子注入到单晶硅中形成了钕硅掺杂层，用XRD分析了掺杂居的物相，用AES分析了掺杂层中离子的浓度分布．分析表明，在强流钛离子注入后，掺杂层中有硅化物形成，且形成相的种类随注量、束流密度及后续热处理条件的改变而变化．还对钕硅化物的形成过程进行了初步讨论．
Nd ions were implanted into the single crystal silicon by MEVVA ion source to form the doping layer of neodymium. The doping phase was analyzed by XRD. The ion concentration distribution in the doping layer was analyzed by AES. The analysis shows that silicide forms in the doped layer after the implantation of high-flow titanium ions, and the type of formed phase changes with the changes of fluence, beam current density and subsequent heat treatment conditions. The formation of neodymium silicide was also discussed.