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Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors,leading to a distinct voltage drop at the interface.Here,we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C_(60) single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte(CPE) composed of poly[(9,9-bis(3’-((N,N-dimethyl)-N-ethylamnionium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]dibromide(PFN~+Br~-).The PFN~+Br~-interlayer greatly improves the charge injection.Consequently,the electron mobility is promoted up to 5.60 cm~2V~(-1) s~(-1) and the threshold voltage decreased dramatically with the minimum of4.90 V.
Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution- grown C_ (60) single-crystalline ribbons by introducing an interlayer of an conjugated polyelectrolyte (CPE) composed of poly [(9,9- bis (3’- (N, N-dimethyl) -N-ethylamnionium) -propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene)] dibromide (PFN ~ + Br ~ -). The PFN ~ + Br ~ -interlayer greatly improves the charge injection. mobility is promoted up to 5.60 cm ~ 2V -1 s -1 and the threshold voltage decreases dramatically with the minimum of 4.90 V. FIG.