Response of SiC Schottky Barrier Diode to Swift Heavy Ion Irradiation

来源 :中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 | 被引量 : 0次 | 上传用户:BING_YAN3414
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Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage operation.
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