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The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped (0.8 wt pct) photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.
The effect of Al doping on the JV characteristics sol-gel derived from ZnO / p-Si photodiodes was investigated. The resistivity of Si was 0.1 Ω · cm. ZnO films annealed at 500 ° C were the best quality. of the photodiodes, the JV characteristics were measured under different monochromatic lights at wavelengths 420, 530, 570 and 630 nm. The LEDs exhibit strong responsivity in the blue region at 420 nm. The responsivity is 0.22 A / W for Al doped (0.8 wt pct) photodiodes, while for the undoped photodiode, it was much lower. An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.