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本文用双晶衍射给出了Ｏ＿２￣＋注入Ｓｉ的摇摆曲线．用Ｌｅｖｅｎｂｅｒｇ—Ｍａｒｇｕａｒａｔ法模拟实验曲线，根据ｘ射线衍射的运动学理论，计算了Ｏ＿２￣＋注入Ｓｉ后，晶格应变随注入深度、注入剂量和退火温度的变化．我们还给出了Ｏ＿２￣＋注入Ｓｉ的椭偏参数、△，并将它们换算成折射率ｎ．结果表明，Ｏ＿２￣＋注入Ｓｉ引起晶体微观结构的变化—晶格应变与晶体宏观光学性质—折射率的变化基本上一致．
In this paper, the rocking curve of O_2 ~ + implanted Si is given by the twin crystal diffraction. Based on the kinetic theory of x-ray diffraction, the lattice strain was calculated with the injection curve of the Levenberg-Marguarat method and the variation of lattice strain with implantation depth, implantation dose and annealing temperature. We also give the ellipsometric parameters of Si implanted with O_2 ~ +, △, and convert them to refractive index n. The results show that the change of crystal microstructure caused by the injection of Si into O_2 ~ + - the change of lattice strain and the macroscopic optical property of the crystal - the refractive index are basically the same.