A voltage reference with low Temperature coefficient(TC) and three outputs, which is compatible with high Power supply rejection ratio(PSRR) and low power consumption, is presented in this paper. The proposed reference circuit operating with all transistors biased in subthreshold region, provides three reference voltages of340 m V, 680 m V, and 1020 m V. Subthreshold MOSFET design allows the circuit to work with minimum current consumption of 7.4nA at the supply voltage 1.2V. The mean line sensitivity is 1.7%/V under a supply voltages ranging from 1.2 to 3V. The Power supply rejection ratio(PSRR)of 340 m V output voltage simulated at 100 Hz and 10 MHz is over than 51.9dB and 120.4dB, respectively. Monte Carlo simulation shows a mean TC is 3.9ppm/?C with a standard deviation of 1ppm/?C over a set of 500 samples, in a temperature range from –30?C to 100?C. The active area of the presented voltage reference is 0.003mm~2. A voltage reference with low temperature coefficient (TC) and three outputs, which is compatible with high Power supply rejection ratio (PSRR) and low power consumption, is presented in this paper. The proposed reference circuit operating with all transistors biased in subthreshold region, The mean line sensitivity is 1.7% / V under a. The mean line sensitivity is 1.7% / V under a voltage of 380 V V, 680 mV, and 1020 m V. Subthreshold MOSFET design allows the circuit to work with a minimum current consumption of 7.4 nA at the supply voltage of 1.2 V The supply voltage ranging from 1.2 to 3 V. The Power supply rejection ratio (PSRR) of 340 mV output voltage simulated at 100 Hz and 10 MHz is over than 51.9 dB and 120.4 dB, respectively. Monte Carlo simulation shows a mean TC of 3.9 ppm /? C with a standard deviation of 1ppm /? C over a set of 500 samples, in a temperature range from -30? C to 100? C. The active area of ​​the presented voltage reference is 0.003mm ~ 2.