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文中介绍了一低驱动电压接触式RF-MEMS开关,开关采取了两端固定的“桥式”结构,在桥与支撑点间采用折叠弯曲的铰链结构,而且紧靠中央信号线的旁边各有一个较大面积的电极,这些措施降低了开关的驱动电压.整个工艺采用表面微加工工艺.由实验测试可知:开关驱动电压11 V左右,与ANSYS模拟的值12 V基本一致,开关的S参数,在的范围内,插入损耗要小于-1 dB,在频段(≤5 GHz),开关的隔离度要优于-30 dB,在频段5～10 GHz,隔离度也要高于-20 dB.“,”A low-voltage DC-contact RF MEMS switches was presented. The design was based on the standard fixed-fixed beam structure.The low-voltage design was achieved using narrow meander support structures,and two large pads on both sides of the switch were used as the actuation electrodes. RF MEMS switches were fabricated via a surface micromachining process. The switch has an actuation voltage of 11 V,which was close to the simulated value of 12 V. The insertion loss is less than - 1 dB from DC up to 10 GHz,the isolation is higher than -30 dB from DC up to 5 GHz,and higher than -20 dB from 5 GHz up to 10 GHz.