据《IEEE Trans ED》Vol.ED-32.№.8.(1985)报导: 美国线阵CCPD器件的研制有了新的进展,Xerox公司已研制出单芯片像素多达5732元的线阵CCPD图像传感器。这种器件虽也采用标准的二层多晶硅栅结构工艺和四线CCD结构形式,但光敏区的设计却是新颖的,其光敏区光电二极管阵列的排列分为奇偶二行错开分布,器件密度高,性能优良。其主要特点和性能参数如下: According to “IEEE Trans ED” Vol. ED-32.№.8. (1985): New developments have been made in the development of the linear array CCPD devices in the United States. Xerox has developed a CCPD with a single-chip pixel count of up to 5732 yuan Image Sensor. Although this device also uses standard two-layer polysilicon gate structure technology and four-wire CCD structure, but the design of the photosensitive area is novel, the photosensitive area of ​​the photodiode array is divided into two staggered distribution of even and odd, the device density , Excellent performance. Its main features and performance parameters are as follows: