论文部分内容阅读
采用氧化铟锡(ITO)颗粒掩膜,经感应耦合等离子体(ICP)刻蚀后制作了表面粗化的红光发光二极管(LED),并且研究了ITO腐蚀时间对粗化表面形貌的影响。测试结果表明,当粗化颗粒的大小为200～500 nm、腐蚀深度约200～400 nm时,能使制作的表面粗化红光LED在20 mA注入电流下光提取效率提高30%以上。并且,表面粗化不会影响LED的发光强度角度分布。
Surface roughened red light-emitting diodes (LEDs) were fabricated by inductively coupled plasma (ICP) etching using indium tin oxide (ITO) particle masks. The effect of ITO etching time on the roughening surface morphology was also studied . The results show that when the roughening particle size is 200-500 nm and the etching depth is about 200-400 nm, the prepared surface roughened red LED can improve the light extraction efficiency by more than 30% at 20 mA injection current. And, the surface roughening will not affect the LED luminous intensity distribution angle.