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在一种基体上生成一非晶的含硅聚合薄膜的方法,是在含某一基体的反应室内于400～600℃,气相分解二卤硅烷或其混合物。可以使用任一卤素的二卤硅烷。本专利还叙述了从上述二卤硅烷生产抗擦
A method of forming an amorphous silicon-containing polymeric film on a substrate is to vapor-phase decompose the dihalosilane or a mixture thereof at 400-600 ° C in a reaction chamber containing a substrate. Dihalosilanes of either halogen may be used. This patent also describes the production of rubs from the above dihalosilanes