论文部分内容阅读
本文报道了直流辉光放电本征α-Si:H薄膜的电学和光学参数的测试结果,着重讨论了曝光态和退火态光电导的温度及光强依赖特性。发现样品在退火态时靠近室温以下有热猝灭现象;在曝光态时该热猝灭谷消失。光电导的光强依赖权重γ(σ_(ρh)∞F~γ)是温度和光强的函数,曝光态γ比退火态大,且在低温强光时γ>1,出现超线性。表明禁带中存在对电子俘获截面不同的带隙态;延长曝光不仅增加新的复合中心,还改变原有复合中心的俘获截面。
This paper reports the results of the electrical and optical parameters of the intrinsic α-Si: H thin film deposited by direct current glow discharge. The temperature dependence and light intensity dependence of photoconductivity in exposed and annealed states are emphatically discussed. It was found that there was thermal quenching near the room temperature in the annealed state of the sample, and disappeared in the exposed state. The light intensity of photoconductors depends on the weight γ (σρ (ρh) ∞F ~ γ) as a function of temperature and light intensity. The exposure state γ is larger than the annealing state and γ> 1 at low temperature and intense light. Indicating that bandgaps exist in the forbidden band and have different electron capture cross sections. The extended exposure not only increases the new recombination center but also changes the capture cross section of the original recombination center.