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富士通半导体(上海)有限公司近日宣布,推出基于硅衬底的氮化镓(GaN)功率器件芯片MB51T008A,该芯片可耐压150 V。富士通半导体将于2013年7月起开始提供新品样片。该产品初始状态是断开(Normally-off),相比于同等耐压规格的硅功率器件,品质因数(FOM)可降低近一半。基于富士通半导体的GaN功率器件,用户可以设计出体积更小,效率更高的电源组件,可广泛的运用于ICT设备、工业设备和汽车电子等领域。MB51T008A具有许多优点,包括:1)导电阻13 mΩ,总栅极电荷
Fujitsu Semiconductor (Shanghai) Co., Ltd. today announced the MB51T008A, a silicon substrate-based gallium nitride (GaN) power device that withstands 150 V. Fujitsu Semiconductor will begin sampling new products in July 2013. The initial state of the product is Normally-off, the quality factor (FOM) can be reduced by nearly half compared to silicon power devices of the same voltage endurance specifications. Based on Fujitsu Semiconductor’s GaN power devices, users can design smaller and more efficient power components for a wide range of applications in ICT equipment, industrial equipment and automotive electronics. The MB51T008A has many advantages, including: 1) conductive resistance 13 mΩ, total gate charge