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用溅射法制得的SiO_2膜优点很多,但存在离子污染问题,其中正电荷将使SiO_2膜退化。本文介绍将氟离子溅射到SiO_2膜中以抵消正电荷的有效解决方法。实验方法采用MRC SEM—8620型溅射仪,功率1.5千瓦,可进行溅射腐蚀及射频偏置溅射等操作。实验时,将靶子与衬底夹具之间的距离调节到5cm,靶子采用MRC公司生产的IC级SiO_2,直径6英寸,厚3/16英寸。
Sputtering method of the SiO 2 film has many advantages, but there is the problem of ionic contamination, which will be the positive charge of SiO2 film degradation. This article describes an effective solution to the problem of sputtering fluoride ions into the SiO 2 film to counteract the positive charge. The experimental method used MRC SEM-8620 sputtering instrument, power 1.5 kilowatts, can be sputter corrosion and RF bias sputtering and other operations. During the experiment, the distance between the target and the substrate holder was adjusted to 5 cm, the target was IC grade SiO 2 manufactured by MRC, a diameter of 6 inches and a thickness of 3/16 inch.