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安全工作区(SOA)是MOSFET器件设计中的一个关键参数。传统CMOS在衬底电流-栅极电压曲线上只出现一个衬底电流峰值,该峰值可直接反映出热载流子注入(HCI)效应最强的位置,因此可以容易地给出其SOA;而对于横向双扩散MOSFET(LDMOS)器件,由于Kirk效应的发生,造成其衬底电流峰值不明显,此时的衬底电流已经不能再完全反映HCI效应的强弱,单纯使用Hu模式或衬底电流模式对SOA测试和分析都不合适。针对发生严重Kirk效应的LDMOS,此处提出一套更合理的HCI SOA测试方法,该方法既能节省测试时间,同时准确性又高。
Safe Operating Area (SOA) is a key parameter in MOSFET device design. In conventional CMOS, only a single substrate current peak appears on the substrate current-gate voltage curve, which directly reflects the location where the hot carrier injection (HCI) effect is strongest, so its SOA can be easily given For LDMOS devices, the substrate current is not obvious due to the Kirk effect. At this time, the substrate current can no longer fully reflect the HCI effect. The Hu mode or substrate current Patterns are not suitable for SOA testing and analysis. For LDMOS with a severe Kirk effect, here’s a more sensible HCI SOA test method that saves test time and is highly accurate.