论文部分内容阅读
建立了电子倍增CCD的载流子倍增寄存器的电荷倍增模型,分析了电子倍增CCD的结构特征和载流子倍增寄存器的工作原理及其电荷倍增特性。利用Z域分析方法得到载流子倍增寄存器的电荷倍增传递函数及其幅频响应。计算表明,提高载流子倍增寄存器的电荷倍增系数可以提高电子倍增CCD的幅频响应。同时,用增益起伏因子来分析载流子倍增寄存器的增益起伏特性,得到了电荷倍增率,寄存器级数与增益起伏因子的数值关系。在寄存器级数N=400条件下,当电荷倍增系数α≤0.15时,增益起伏因子随电荷倍增系数增大而增大;而当α≥0.15时,增益起伏因子随电荷倍增系数的增大而减小。通过典型的电子倍增CCD相机的实验验证了建立的模型。
The charge multiplication model of electron multiplying CCD carrier multiplier register is established. The structure characteristics of the electron multiplying CCD and the working principle of the carrier multiplying register and the charge multiplication characteristics are analyzed. The charge multiplication transfer function and amplitude-frequency response of carrier multiplication register are obtained by Z-domain analysis. Calculations show that increasing the charge multiplication coefficient of the carrier multiplication register can improve the amplitude-frequency response of the electron multiplying CCD. At the same time, gain fluctuation factor is used to analyze the gain fluctuation characteristic of carrier multiplication register, and the numerical relationship between charge multiplication rate, register series and gain fluctuation factor is obtained. Under the condition of N = 400, when the charge multiplication coefficient α≤0.15, the gain fluctuation factor increases with the increase of charge multiplication coefficient. Whenα≥0.15, the gain fluctuation factor increases with the charge multiplication coefficient Decrease The model was established by the experiment of a typical electron multiplying CCD camera.