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金属氧化物薄膜晶体管(metal oxide thin film transistor,MOTFT)由于具有迁移率高、均匀性好、工艺简单、工艺温度低、成本低等优势,非常适合高分辨率、大尺寸液晶显示(LCD)和有源矩阵有机发光二极管显示(AMOLED)等新型显示技术发展的需要,因此受到业界和学界的广泛关注.结合本课题组的工作,本文阐述了MOTFT的材料、器件结构、制作工艺以及应用,并对影响MOTFT性能的因素进行了讨论.本课题组开发的新型MOTFT迁移率可达35 cm2/(V s),阈值电压为1.63 V,开关比为109,亚阈值摆幅为0.21 V/decade.基于自主开发的MOTFT背板,在国内率先实现了3~5英寸彩色AMOLED显示屏、透明AMOLED显示屏以及柔性AMOLED显示屏,展示了MOTFT背板良好的应用前景.
Due to its high mobility, good uniformity, simple process, low process temperature and low cost, the metal oxide thin film transistor (MOTFT) is very suitable for high resolution, large size liquid crystal display (LCD) and Active matrix organic light-emitting diode display (AMOLED) and other new display technologies, it has drawn wide attention from industry and academia.In this paper, the paper describes the material, device structure, fabrication technology and application of MOTFT The factors affecting the MOTFT performance are discussed.The mobility of the new MOTFT developed by our group reaches 35 cm2 / (V s), the threshold voltage is 1.63 V, the switching ratio is 109 and the subthreshold swing is 0.21 V / decade. Based on self-developed MOTFT backplane, it has taken the lead in China to realize 3 ~ 5 inch color AMOLED display, transparent AMOLED display and flexible AMOLED display, which shows the good application prospect of MOTFT backplane.