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提出了一种能同时提高硅双极器件频率和功率的新技术——具有深阱终端结构的新型梳状深阱结构技术。采用 MEDICI模拟分析表明 ,该技术可将双极器件的击穿电压 BVCB0 提高到平行平面结的 90 %以上 ;可减小寄生效应和漏电流 ,有助于提高小电流β0 ;可适当地增加集电区掺杂浓度 ,减小 τd,同时提高 ICM和 Po。采用该技术后 ,有效集电结的面积约为无阱器件的 50 % ,结电容较小 ,截止频率可提高一倍以上。该技术大大缓解了频率和功率的矛盾 ,提高了器件的可靠性
A new technique to simultaneously improve the frequency and power of silicon bipolar devices is proposed - a new comb deep-trap structure with a deep-well terminal structure. Using MEDICI simulation analysis shows that this technology can increase the breakdown voltage BVCB0 of bipolar devices to more than 90% of the parallel plane junction, reduce the parasitic effect and leakage current, and help to increase the small current β0. Doping concentration of the electric field, reducing τd, while increasing ICM and Po. With this technique, the effective collector junction area of about 50% of the device without a trap, the junction capacitance is small, the cut-off frequency can be more than doubled. The technology greatly eases the conflict between frequency and power and improves the reliability of the device