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通过电子束蒸发法在石英玻璃表面沉积得到镍薄膜,研究了镍薄膜厚度及保温时间对化学气相沉积(CVD)石墨烯生长的影响。结果表明,镍薄膜的厚度及生长时间均对石墨烯的生长有重要影响。镍薄膜厚度小于70 nm时,容易在石英基材表面发生去湿现象及Ostwald熟化,使得镍在石英表面凝聚成小颗粒;而适当增加镍薄膜的厚度,能够减少退火后薄膜表面的孔洞及缺陷,保证石墨烯薄膜的质量。当CVD过程中保温时间小于5 min时,石墨烯在镍表面难以形成完整的膜;而保温时间超过15 min后,则容易生长为石墨,而非石墨烯。适当厚度的镍薄膜及保温时间是制备大尺寸高质量石墨烯薄膜的前提。
Nickel thin films were deposited on the surface of quartz glass by electron beam evaporation. The effects of nickel film thickness and holding time on the growth of CVD graphene were studied. The results show that the thickness and growth time of nickel film have an important effect on the growth of graphene. When the thickness of Ni thin film is less than 70 nm, dehumidification and Ostwald ripening easily occur on the surface of quartz substrate, which makes Ni coalesce into small particles on the quartz surface. Appropriately increasing the thickness of Ni thin film can reduce the holes and defects on the surface of annealed thin film , To ensure the quality of graphene film. When the holding time in the CVD process is less than 5 min, graphene is hard to form a complete film on the nickel surface; while holding time longer than 15 min, it is easy to grow into graphite, rather than graphene. The proper thickness of the nickel film and holding time is the premise for the preparation of large-size high-quality graphene film.