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分析指出耗尽层内施主浓度Nd、界面受主态密度Ns和界面能级深度Es是影响ZnO压敏陶瓷电性能的重要参数 .Nd与体内原子缺陷有关 ,室温下主要取决于电离的浅能级本征和非本征施主Zn·i,Zn¨i和Al·Zn,Ns和Es与界面原子缺陷密度和性质有关 .本征界面缺陷V′Zn和V″Zn对界面受主态形成起基本作用 ;偏析于晶界的大离子半径的Bi和Ba以及界面上的化学吸附氧O-和O2 -对提高Ns和Es起关键作用 ;易变价过渡元素Mn ,Co和Ni对进一步提高受主态密度起重要作用 ;Sb通过生偏锑酸钡相在稳定势垒方面起较大作用 ,对提高态密度也有一定帮助 .
It is pointed out that the donor Nd, the interface acceptor Ns and the interface Es are important parameters affecting the electrical properties of ZnO varistor ceramics in the depletion layer.Nd is related to the atomic defects in the body and mainly depends on the shallow ionization energy The intrinsic and extrinsic donors Zn · i, Zn · i and Al · Zn, Ns and Es are related to the densities and properties of the interface atomic defects. Intrinsic interface defects V’Zn and V "Zn form interface acceptor states Bi and Ba segregating at the large ionic radius of the grain boundary and the chemical oxygen species O- and O2 - at the interface play a key role in improving Ns and Es. The transitional elements Mn, Co and Ni, State density plays an important role; Sb through the bias barium antimonate phase in the stability of the barrier play a greater role, to improve the density of state will also be helpful.