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Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substratesby using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma-terial.The films have a very smooth surface morphology and optical transparency with an index of refractionof 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi-cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surfacerespectively.The main parameters having influence on the deposition are the substrate temperature,the totalpressure in the reaction chamber,the reaction gases and its flowrate.
Highly oriented MgO (111) and MgO (100) thin films have been deposited on Si (111) and Si (100) substrates by using Low Pressure MOCVD (LPMOCVD). Magnesium 2,4-pentanedionate was used as the source ma- terial. The films have a very smooth surface morphology and optical transparency with an index of refraction of 1.71 (632.8 nm). The Tpical growth rate of the films is 1.0 μm / h. The data of X-ray diffraction analysis indi-cate that the films are fully textured with (111) and (100) orientation perpendicular to the substrate surface have exactly the main parameters having influence on the deposition on the substrate temperature, the totalpressure in the reaction chamber, the reaction gases and its flowrate.